| PART |
Description |
Maker |
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| HYMD116645D8J-D4 HYMD116645D8J-D43 HYMD116645D8J-J |
Unbuffered DDR SDRAM DIMM
16M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Hynix Semiconductor, Inc.
|
| V58C2256164SCE5B |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| HYMD116G725A8-H |
16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| THLD12N11B70 THLD12N11B75 |
16M X 64 DDR DRAM MODULE, 7 ns, DMA200
16M X 64 DDR DRAM MODULE, 7.5 ns, DMA200
|
|
| HYB25D128800CTL-6 |
16M X 8 DDR DRAM, 0.6 ns, PDSO66 PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
